Технічний опис VS-GT400TD60S Vishay
Description: IGBT MODULE 600V 711A INT-A-PAK, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: INT-A-PAK, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 711 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 1364 W, Current - Collector Cutoff (Max): 300 µA.
Інші пропозиції VS-GT400TD60S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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VS-GT400TD60S | Виробник : Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 711A INT-A-PAKPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 400A NTC Thermistor: No Supplier Device Package: INT-A-PAK IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 711 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1364 W Current - Collector Cutoff (Max): 300 µA |
товару немає в наявності |
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| VS-GT400TD60S | Виробник : VISHAY |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 400A Case: Dual INT-A-Pak LP16mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 1.1kA Mechanical mounting: screw |
товару немає в наявності |

