VS-GT400TH60N Vishay General Semiconductor - Diodes Division


gt400th0.pdf Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 530A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 8)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 530 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 30.8 nF @ 30 V
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Технічний опис VS-GT400TH60N Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 600V 530A INT-A-PAK, Packaging: Bulk, Package / Case: Double INT-A-PAK (3 + 8), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, IGBT Type: Trench, Part Status: Active, Current - Collector (Ic) (Max): 530 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 1600 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 30.8 nF @ 30 V.

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VS-GT400TH60N Виробник : Vishay Semiconductors gt400th0.pdf IGBT Modules Output & SW Modules - DIAP IGBT
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