VS-GT50TP60N Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 85A 208W INT-A-PAK
IGBT Type: Trench
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: 175°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK (3 + 4)
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 3.03 nF @ 30 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 208 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 85 A
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Технічний опис VS-GT50TP60N Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 85A 208W INT-A-PAK, IGBT Type: Trench, Supplier Device Package: INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Operating Temperature: 175°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: INT-A-PAK (3 + 4), Packaging: Bulk, Input Capacitance (Cies) @ Vce: 3.03 nF @ 30 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 208 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 85 A.
Інші пропозиції VS-GT50TP60N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| VS-GT50TP60N | Виробник : Vishay Semiconductors |
IGBT Modules Output & SW Modules - IAP IGBT |
товару немає в наявності |