Технічний опис VS-GT50TP60N Vishay
Description: IGBT MOD 600V 85A 208W INT-A-PAK, Packaging: Bulk, Package / Case: INT-A-PAK (3 + 4), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: INT-A-PAK, IGBT Type: Trench, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 3.03 nF @ 30 V.
Інші пропозиції VS-GT50TP60N
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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VS-GT50TP60N | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: INT-A-PAK (3 + 4) Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A NTC Thermistor: No Supplier Device Package: INT-A-PAK IGBT Type: Trench Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 208 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.03 nF @ 30 V |
товару немає в наявності |
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VS-GT50TP60N | Виробник : Vishay Semiconductors |
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товару немає в наявності |