VS-HFA80FA120P Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 40A 1200V SOT-227
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 40A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
Відгуки про товар
Написати відгук
Технічний опис VS-HFA80FA120P Vishay General Semiconductor - Diodes Division
Description: DIODE HEXFRED 40A 1200V SOT-227, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 40 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 40A (DC), Diode Configuration: 2 Independent, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tray.