VS-QA100FA10 Vishay Semiconductors
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1477.10 грн |
| 10+ | 1182.90 грн |
| 500+ | 773.87 грн |
Відгуки про товар
Написати відгук
Технічний опис VS-QA100FA10 Vishay Semiconductors
Description: POWER MODULE, GEN2 TRENCH MOS BA, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 50A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 50 A, Current - Reverse Leakage @ Vr: 800 µA @ 100 V.
Інші пропозиції VS-QA100FA10 за ціною від 943.77 грн до 1633.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
VS-QA100FA10 | Vishay General Semiconductor - Diodes Division |
 Description: POWER MODULE, GEN2 TRENCH MOS BAPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 50 A Current - Reverse Leakage @ Vr: 800 µA @ 100 V |
на замовлення 156 шт: термін постачання 21-31 дні (днів) |
|
| VS-QA100FA10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: POWER MODULE, GEN2 TRENCH MOS BA
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 50 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Description: POWER MODULE, GEN2 TRENCH MOS BA
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 50 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1633.26 грн |
| 10+ | 1141.47 грн |
| 100+ | 943.77 грн |