VS-SF150SA120 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: POWER MODULE, SINGLE SWITCH - SI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
Rds On (Max) @ Id, Vgs: 21.33mOhm @ 150A, 15V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 21.33mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 1000 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 5804.65 грн |
| 10+ | 4430.98 грн |
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Технічний опис VS-SF150SA120 Vishay General Semiconductor - Diodes Division
Description: POWER MODULE, SINGLE SWITCH - SI, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 126A (Tc), Rds On (Max) @ Id, Vgs: 21.33mOhm @ 150A, 15V, Power Dissipation (Max): 535W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 21.33mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 1000 V.