Технічний опис VS-VSKDU162/12PBF Vishay Semiconductors
Description: DIODE MOD GP 1200V INTAPAK, Current - Reverse Leakage @ Vr: 30 mA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: INT-A-PAK, Current - Average Rectified (Io) (per Diode): 102.5A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 200 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: INT-A-PAK (3), Packaging: Bulk.
Інші пропозиції VS-VSKDU162/12PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| VS-VSKDU162/12PBF | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE MOD GP 1200V INTAPAKCurrent - Reverse Leakage @ Vr: 30 mA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 100 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: INT-A-PAK Current - Average Rectified (Io) (per Diode): 102.5A (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 200 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3) Packaging: Bulk |
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