VSS8D5M12-M3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 100V 2.2A SLIMSMAW
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimSMAW (DO-221AD)
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 460pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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Технічний опис VSS8D5M12-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 100V 2.2A SLIMSMAW, Current - Reverse Leakage @ Vr: 350 µA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2.5 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: SlimSMAW (DO-221AD), Current - Average Rectified (Io): 2.2A, Capacitance @ Vr, F: 460pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-221AC, SMA Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції VSS8D5M12-M3/I
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VSS8D5M12-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTT 100V 2.2A SLIMSMAW Current - Reverse Leakage @ Vr: 350 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2.5 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: SlimSMAW (DO-221AD) Current - Average Rectified (Io): 2.2A Capacitance @ Vr, F: 460pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| VSS8D5M12-M3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 100V 2.2A SLIMSMAW
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimSMAW (DO-221AD)
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 460pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTT 100V 2.2A SLIMSMAW
Current - Reverse Leakage @ Vr: 350 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimSMAW (DO-221AD)
Current - Average Rectified (Io): 2.2A
Capacitance @ Vr, F: 460pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.