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VT6T1T2R

VT6T1T2R ROHM Semiconductor

datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM Semiconductor
Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна без ПДВ
9+37.45 грн
1000+19.53 грн
2500+7.80 грн
8000+5.52 грн
24000+4.97 грн
48000+4.83 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
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Технічний опис VT6T1T2R ROHM Semiconductor

Description: PNP+PNP GENERAL PURPOSE AMPLIFIC, Supplier Device Package: VMT6, Frequency - Transition: 350MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 20V, Current - Collector (Ic) (Max): 200mA, Power - Max: 150mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).

Інші пропозиції VT6T1T2R

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
VT6T1T2R VT6T1T2R Rohm Semiconductor datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Supplier Device Package: VMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
VT6T1T2R VT6T1T2R Rohm Semiconductor datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Supplier Device Package: VMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
VT6T1T2R datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VT6T1T2R
Виробник: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Supplier Device Package: VMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
VT6T1T2R datasheet?p=VT6T1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VT6T1T2R
Виробник: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Supplier Device Package: VMT6
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.