Технічний опис VVZB120-16ioX IXYS
Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Collector current: 180A, Pulsed collector current: 300A, Case: V2-Pack, Max. off-state voltage: 1.2kV, Topology: 3-phase diode-thyristor bridge; boost chopper, Semiconductor structure: diode/thyristor/IGBT, Type of semiconductor module: IGBT, Application: Inverter, Electrical mounting: Press-in PCB.
Інші пропозиції VVZB120-16ioX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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VVZB120-16ioX | Виробник : IXYS |
 Description: SCR MODULE 1.6KV V2-PAKPackaging: Box Package / Case: V2-PAK Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - Off State: 1.6 kV |
товару немає в наявності |
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| VVZB120-16ioX | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 180A Pulsed collector current: 300A Case: V2-Pack Max. off-state voltage: 1.2kV Topology: 3-phase diode-thyristor bridge; boost chopper Semiconductor structure: diode/thyristor/IGBT Type of semiconductor module: IGBT Application: Inverter Electrical mounting: Press-in PCB |
товару немає в наявності |