VVZB135-16IOXT IXYS
Виробник: IXYS
Description: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
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Технічний опис VVZB135-16IOXT IXYS
Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV, Type of semiconductor module: IGBT, Semiconductor structure: diode/thyristor/IGBT, Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor, Max. off-state voltage: 1.2kV, Collector current: 84A, Case: E2-Pack, Application: Inverter, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 225A, Power dissipation: 390W, Technology: X2PT, Mechanical mounting: screw.
Інші пропозиції VVZB135-16IOXT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VVZB135-16IOXT | IXYS |
Bridge Rectifiers Three Phase Rectifier Bridge |
товару немає в наявності |
В кошику од. на суму грн. |
| VVZB135-16IOXT | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Type of semiconductor module: IGBT Semiconductor structure: diode/thyristor/IGBT Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 84A Case: E2-Pack Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 225A Power dissipation: 390W Technology: X2PT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. |
| VVZB135-16IOXT |
|
Виробник: IXYS
Bridge Rectifiers Three Phase Rectifier Bridge
Bridge Rectifiers Three Phase Rectifier Bridge
товару немає в наявності
В кошику
од. на суму грн.
| VVZB135-16IOXT |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.