VVZB135-16IOXT IXYS
Виробник: IXYSCategory: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Application: Inverter
Case: E2-Pack
Power dissipation: 390W
Technology: X2PT
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Type of module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 84A
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
кількість в упаковці: 1 шт
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Технічний опис VVZB135-16IOXT IXYS
Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Application: Inverter, Case: E2-Pack, Power dissipation: 390W, Technology: X2PT, Pulsed collector current: 225A, Max. off-state voltage: 1.2kV, Type of module: IGBT, Semiconductor structure: diode/thyristor/IGBT, Gate-emitter voltage: ±20V, Collector current: 84A, Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor, кількість в упаковці: 1 шт.
Інші пропозиції VVZB135-16IOXT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| VVZB135-16IOXT | Виробник : IXYS |
Description: DIODE BRIDGE 1600V 150A Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 80 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 1.4 V Voltage - Off State: 1.6 kV |
товар відсутній |
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VVZB135-16IOXT | Виробник : IXYS |
Bridge Rectifiers Three Phase Rectifier Bridge |
товар відсутній |
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| VVZB135-16IOXT | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Application: Inverter Case: E2-Pack Power dissipation: 390W Technology: X2PT Pulsed collector current: 225A Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/thyristor/IGBT Gate-emitter voltage: ±20V Collector current: 84A Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor |
товар відсутній |