W2865HA680 IXYS
Виробник: IXYSDescription: DIODE GEN PURP 6.8KV 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
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Технічний опис W2865HA680 IXYS
Description: DIODE GEN PURP 6.8KV 4825A W121, Packaging: Box, Package / Case: DO-200AD, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 53 µs, Technology: Standard, Current - Average Rectified (Io): 4825A, Supplier Device Package: W121, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 6800 V, Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A, Current - Reverse Leakage @ Vr: 100 mA @ 6800 V.