WM10N02G WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2945 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 24.49 грн |
| 40+ | 9.96 грн |
| 87+ | 4.55 грн |
| 206+ | 1.91 грн |
| 500+ | 1.72 грн |
| 589+ | 1.57 грн |
| 1619+ | 1.48 грн |
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Технічний опис WM10N02G WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 0.2A, Pulsed drain current: 0.5A, Power dissipation: 0.2W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 6Ω, Mounting: SMD, Gate charge: 1.5nC, Kind of package: reel; tape, Kind of channel: enhancement.