WM10N02M WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 28.33 грн |
| 41+ | 9.89 грн |
| 121+ | 3.32 грн |
| 288+ | 1.39 грн |
| 500+ | 1.25 грн |
| 893+ | 1.05 грн |
| 2458+ | 1.00 грн |
| 3000+ | 0.99 грн |
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Технічний опис WM10N02M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 0.2A, Pulsed drain current: 0.8A, Power dissipation: 0.35W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 6Ω, Mounting: SMD, Gate charge: 1.5nC, Kind of package: reel; tape, Kind of channel: enhancement.