WM10N33M WAYON



Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Gate charge: 4nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.13Ω
Mounting: SMD
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Технічний опис WM10N33M WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23, Pulsed drain current: 13.2A, Power dissipation: 1.5W, Gate charge: 4nC, Polarisation: unipolar, Drain current: 3.3A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOT23, On-state resistance: 0.13Ω, Mounting: SMD.