WMO080N10HG2 WAYON
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 64.37 грн |
| 10+ | 41.08 грн |
| 25+ | 38.78 грн |
| 29+ | 31.42 грн |
| 79+ | 29.73 грн |
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Технічний опис WMO080N10HG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 53.7A, Pulsed drain current: 340A, Power dissipation: 108.7W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 8mΩ, Mounting: SMD, Gate charge: 21nC, Kind of package: reel; tape, Kind of channel: enhancement.