WMS05P04TS WAYON
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5A; Idm: -20A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5A; Idm: -20A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 36.73 грн |
| 34+ | 11.70 грн |
| 56+ | 7.04 грн |
| 100+ | 6.33 грн |
| 176+ | 5.16 грн |
| 482+ | 4.88 грн |
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Технічний опис WMS05P04TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -5A; Idm: -20A; 3.1W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -5A, Pulsed drain current: -20A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 80mΩ, Mounting: SMD, Gate charge: 11.8nC, Kind of package: reel; tape, Kind of channel: enhancement.