Технічний опис WMSC008H12B1P6T Ween
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 153A, On-state resistance: 8mΩ, Power dissipation: 244W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: SiC, Gate-source voltage: -4...18V, Topology: MOSFET half-bridge; NTC thermistor, Pulsed drain current: 300A.
Інші пропозиції WMSC008H12B1P6T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| WMSC008H12B1P6T | Виробник : WeEn Semiconductors |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 153A On-state resistance: 8mΩ Power dissipation: 244W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...18V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 300A |
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