Технічний опис WMSC008H12B1P6T Ween
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W, Topology: MOSFET half-bridge; NTC thermistor, Technology: SiC, Type of semiconductor module: MOSFET transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Gate-source voltage: -4...18V, On-state resistance: 8mΩ, Power dissipation: 244W, Drain current: 153A, Drain-source voltage: 1.2kV, Pulsed drain current: 300A.
Інші пропозиції WMSC008H12B1P6T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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WMSC008H12B1P6T | Виробник : WeEn Semiconductors |
 MOSFET Modules WMSC008H12B1P/WeEnPACK-B1/STANDARD MARKING*TRAY PACK,EPE OR BLISTER |
товару немає в наявності |
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| WMSC008H12B1P6T | Виробник : WeEn Semiconductors |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W Topology: MOSFET half-bridge; NTC thermistor Technology: SiC Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-source voltage: -4...18V On-state resistance: 8mΩ Power dissipation: 244W Drain current: 153A Drain-source voltage: 1.2kV Pulsed drain current: 300A |
товару немає в наявності |