WMSC008H12B1P6T WeEn Semiconductors
Виробник: WeEn Semiconductors
MOSFET Modules WMSC008H12B1P/WeEnPACK-B1/STANDARD MARKING*TRAY PACK,EPE OR BLISTER
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Технічний опис WMSC008H12B1P6T WeEn Semiconductors
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 153A, Topology: MOSFET half-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 8mΩ, Pulsed drain current: 300A, Power dissipation: 244W, Technology: SiC, Gate-source voltage: -4...18V, Mechanical mounting: screw.
Інші пропозиції WMSC008H12B1P6T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| WMSC008H12B1P6T | WeEn Semiconductors |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 153A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 8mΩ Pulsed drain current: 300A Power dissipation: 244W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 16 шт В кошику од. на суму грн. |
| WMSC008H12B1P6T |
|
Виробник: WeEn Semiconductors
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 153A; Press-in PCB; 244W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 153A
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 8mΩ
Pulsed drain current: 300A
Power dissipation: 244W
Technology: SiC
Gate-source voltage: -4...18V
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 16 шт
В кошику
од. на суму грн.