Технічний опис WMSC010H12B1P6T Ween
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 107A, Topology: MOSFET half-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 10mΩ, Pulsed drain current: 210A, Power dissipation: 152W, Technology: SiC, Gate-source voltage: -4...18V, Mechanical mounting: screw.
Інші пропозиції WMSC010H12B1P6T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| WMSC010H12B1P6T | Виробник : WeEn Semiconductors |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 107A; Press-in PCB; 152W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 107A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 210A Power dissipation: 152W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
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