Технічний опис WMSC030H12B1P6T Ween
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A, Technology: SiC, Topology: MOSFET half-bridge; NTC thermistor, Type of semiconductor module: MOSFET transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Gate-source voltage: -4...18V, On-state resistance: 30mΩ, Drain current: 53A, Pulsed drain current: 100A, Power dissipation: 111W, Drain-source voltage: 1.2kV, Semiconductor structure: transistor/transistor.
Інші пропозиції WMSC030H12B1P6T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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WMSC030H12B1P6T | Виробник : WeEn Semiconductors |
 MOSFET Modules WMSC030H12B1P/WeEnPACK-B1/STANDARD MARKING*TRAY PACK,EPE OR BLISTER |
товару немає в наявності |
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| WMSC030H12B1P6T | Виробник : WeEn Semiconductors |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A Technology: SiC Topology: MOSFET half-bridge; NTC thermistor Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-source voltage: -4...18V On-state resistance: 30mΩ Drain current: 53A Pulsed drain current: 100A Power dissipation: 111W Drain-source voltage: 1.2kV Semiconductor structure: transistor/transistor |
товару немає в наявності |