Технічний опис WND08P16XQ Ween
Description: DIODE GEN PURP 1.6KV 8A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 1600 V.
Інші пропозиції WND08P16XQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| WND08P16XQ | Виробник : WeEn Semiconductors |
 WND08P16XQ THT universal diodes |
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WND08P16XQ | Виробник : WeEn Semiconductors |
Description: DIODE GEN PURP 1.6KV 8A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V |
товар відсутній |
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WND08P16XQ | Виробник : WeEn Semiconductors |
Diodes - General Purpose, Power, Switching Standard reverse recovery pwr diode |
товар відсутній |