WNM2021-EV EVVO
Виробник: EVVO
Description: N-CHANNEL 20 V (D-S) MOSFET SOT-
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.33 грн |
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Технічний опис WNM2021-EV EVVO
Description: N-CHANNEL 20 V (D-S) MOSFET SOT-, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Інші пропозиції WNM2021-EV
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
WNM2021-EV | Виробник : EVVO |
Description: N-CHANNEL 20 V (D-S) MOSFET SOT-Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
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