WNSC06650T6J WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 6A 5DFN, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 4-VSFN Exposed Pad, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: 5-DFN (8x8), Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 190pF @ 1V, 1MHz.