WNSC101200CWQ WeEn Semiconductors

Description: DIODE SIL CARB 1.2KV 10A TO247-3, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Last Time Buy, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-247-3, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 250pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.