WNSC12650T6J WEEN SEMICONDUCTORS
Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC12650T6J - SiC-Schottky-Diode, Einfach, 650 V, 12 A, 16 nC, DFN
tariffCode: 85411000
Bauform - Diode: DFN
Kapazitive Gesamtladung: 16nC
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: N
Durchschnittlicher Durchlassstrom: 12A
SVHC: To Be Advised
Anzahl der Pins: 5 Pins
Produktpalette: -
productTraceability: No
usEccn: EAR99
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
| Кількість | Ціна |
|---|---|
| 100+ | 127.09 грн |
| 500+ | 97.58 грн |
| 1000+ | 83.79 грн |
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Технічний опис WNSC12650T6J WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC12650T6J - SiC-Schottky-Diode, Einfach, 650 V, 12 A, 16 nC, DFN, tariffCode: 85411000, Bauform - Diode: DFN, Kapazitive Gesamtladung: 16nC, euEccn: NLR, rohsCompliant: YES, Diodenmontage: Oberflächenmontage, hazardous: false, rohsPhthalatesCompliant: YES, Diodenkonfiguration: Einfach, Qualifikation: -, isCanonical: N, Durchschnittlicher Durchlassstrom: 12A, SVHC: To Be Advised, Anzahl der Pins: 5 Pins, Produktpalette: -, productTraceability: No, usEccn: EAR99, Periodische Spitzensperrspannung: 650V, Betriebstemperatur, max.: 175°C.
Інші пропозиції WNSC12650T6J за ціною від 83.79 грн до 303.23 грн
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WNSC12650T6J | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WNSC12650T6J - SiC-Schottky-Diode, Einfach, 650 V, 12 A, 16 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 16nC euEccn: NLR rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - isCanonical: Y Durchschnittlicher Durchlassstrom: 12A SVHC: To Be Advised Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No usEccn: EAR99 Periodische Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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WNSC12650T6J | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 12A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
на замовлення 2967 шт: термін постачання 21-31 дні (днів) |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC12650T6J - SiC-Schottky-Diode, Einfach, 650 V, 12 A, 16 nC, DFN
tariffCode: 85411000
Bauform - Diode: DFN
Kapazitive Gesamtladung: 16nC
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
Durchschnittlicher Durchlassstrom: 12A
SVHC: To Be Advised
Anzahl der Pins: 5 Pins
Produktpalette: -
productTraceability: No
usEccn: EAR99
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
Description: WEEN SEMICONDUCTORS - WNSC12650T6J - SiC-Schottky-Diode, Einfach, 650 V, 12 A, 16 nC, DFN
tariffCode: 85411000
Bauform - Diode: DFN
Kapazitive Gesamtladung: 16nC
euEccn: NLR
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
Durchschnittlicher Durchlassstrom: 12A
SVHC: To Be Advised
Anzahl der Pins: 5 Pins
Produktpalette: -
productTraceability: No
usEccn: EAR99
Periodische Spitzensperrspannung: 650V
Betriebstemperatur, max.: 175°C
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 272.09 грн |
| 10+ | 180.04 грн |
| 100+ | 127.09 грн |
| 500+ | 97.58 грн |
| 1000+ | 83.79 грн |
| WNSC12650T6J |
|
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 12A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 2967 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 303.23 грн |
| 10+ | 192.90 грн |
| 100+ | 136.71 грн |
| 500+ | 105.79 грн |
| 1000+ | 98.56 грн |