WNSC2D06650DJ WeEn Semiconductors
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис WNSC2D06650DJ WeEn Semiconductors
Description: WEEN SEMICONDUCTORS - WNSC2D06650DJ - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-252 (DPAK), tariffCode: 85411000, Bauform - Diode: TO-252 (DPAK), Kapazitive Gesamtladung: 9nC, rohsCompliant: YES, Diodenmontage: Oberflächenmontage, hazardous: false, rohsPhthalatesCompliant: YES, Diodenkonfiguration: Einfach, Qualifikation: -, usEccn: EAR99, Durchschnittlicher Durchlassstrom: 6A, euEccn: NLR, Wiederkehrende Spitzensperrspannung: 650V, Anzahl der Pins: 3 Pins, Produktpalette: -, productTraceability: No, Betriebstemperatur, max.: 175°C, SVHC: To Be Advised.
Інші пропозиції WNSC2D06650DJ за ціною від 49.28 грн до 168.14 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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WNSC2D06650DJ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A DPAK Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: DPAK Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 198pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 5198 шт: термін постачання 21-31 дні (днів) |
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WNSC2D06650DJ | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WNSC2D06650DJ - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-252 (DPAK) tariffCode: 85411000 Bauform - Diode: TO-252 (DPAK) Kapazitive Gesamtladung: 9nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 6A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 53 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| WNSC2D06650DJ |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A DPAK
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 5198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.14 грн |
| 10+ | 104.00 грн |
| 100+ | 71.10 грн |
| 500+ | 53.52 грн |
| 1000+ | 49.28 грн |
| WNSC2D06650DJ |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC2D06650DJ - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-252 (DPAK)
tariffCode: 85411000
Bauform - Diode: TO-252 (DPAK)
Kapazitive Gesamtladung: 9nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 6A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - WNSC2D06650DJ - SiC-Schottky-Diode, Einfach, 650 V, 6 A, 9 nC, TO-252 (DPAK)
tariffCode: 85411000
Bauform - Diode: TO-252 (DPAK)
Kapazitive Gesamtladung: 9nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 6A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 53 шт:
термін постачання 21-31 дні (днів)