WNSC2D06650Q WeEn Semiconductors
Виробник: WeEn Semiconductors
SiC Schottky Diodes WNSC2D06650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Кількість | Ціна |
|---|---|
| 3+ | 153.97 грн |
| 10+ | 97.17 грн |
| 100+ | 58.24 грн |
| 500+ | 49.37 грн |
| 1000+ | 41.20 грн |
| 2000+ | 38.06 грн |
| 5000+ | 36.03 грн |
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Технічний опис WNSC2D06650Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 6A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 198pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.
Інші пропозиції WNSC2D06650Q
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
WNSC2D06650Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| WNSC2D06650Q |
|
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.