WNSC2D06650XQ WeEn Semiconductors

Description: DIODE SIL CARBIDE 650V 6A TO220F, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Isolated Tab, Packaging: Tube, Current - Reverse Leakage @ Vr: 30 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220F, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 198pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns.