WNSC2D08650TJ WeEn Semiconductors
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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Технічний опис WNSC2D08650TJ WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: 5-DFN (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Інші пропозиції WNSC2D08650TJ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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WNSC2D08650TJ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A 5DFN Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: 5-DFN (8x8) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 260pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
WNSC2D08650TJ | WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D08650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| WNSC2D08650TJ |
|
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 8A 5DFN
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: 5-DFN (8x8)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 650V 8A 5DFN
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: 5-DFN (8x8)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| WNSC2D08650TJ |
|
Виробник: WeEn Semiconductors
Schottky Diodes & Rectifiers WNSC2D08650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD
Schottky Diodes & Rectifiers WNSC2D08650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.