WNSC2D08650TJ WEEN SEMICONDUCTORS
Виробник: WEEN SEMICONDUCTORSDescription: WEEN SEMICONDUCTORS - WNSC2D08650TJ - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 13 nC, DFN
tariffCode: 85411000
Bauform - Diode: DFN
Kapazitive Gesamtladung: 13nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 8A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 5 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 62.72 грн |
| 500+ | 58.16 грн |
| 1000+ | 53.62 грн |
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Технічний опис WNSC2D08650TJ WEEN SEMICONDUCTORS
Description: DIODE SIL CARBIDE 650V 8A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 4-VSFN Exposed Pad, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: 5-DFN (8x8), Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Інші пропозиції WNSC2D08650TJ за ціною від 53.62 грн до 88.31 грн
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WNSC2D08650TJ | Виробник : WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WNSC2D08650TJ - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 13 nC, DFN tariffCode: 85411000 Bauform - Diode: DFN Kapazitive Gesamtladung: 13nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 8A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 5 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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WNSC2D08650TJ | Виробник : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
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WNSC2D08650TJ | Виробник : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
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WNSC2D08650TJ | Виробник : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D08650T/DFN8X8/REEL 13" Q1/T1 *STANDARD MARK SMD |
товару немає в наявності |
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| WNSC2D08650TJ | Виробник : WeEn Semiconductors |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN8x8N; SiC; SMD; 650V; 8A; reel,tape Technology: SiC Case: DFN8x8N Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 48A Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Load current: 8A |
товару немає в наявності |