WNSC2D101200D6J WeEn Semiconductors

Description: DIODE SIL CARBIDE 1200V 10A DPAK
Packaging: Bulk
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 481pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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Технічний опис WNSC2D101200D6J WeEn Semiconductors
Description: DIODE SIL CARBIDE 1200V 10A DPAK, Packaging: Bulk, Part Status: Active, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 481pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Інші пропозиції WNSC2D101200D6J
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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WNSC2D101200D6J | Виробник : WeEn Semiconductors |
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WNSC2D101200D6J | Виробник : WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; reel,tape Technology: SiC Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 80A Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Load current: 10A Max. load current: 20A |
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