WNSC2D10650Q WeEn Semiconductors
Виробник: WeEn Semiconductors
SiC Schottky Diodes WNSC2D10650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK
| Кількість | Ціна |
|---|---|
| 2+ | 184.93 грн |
| 10+ | 115.63 грн |
| 100+ | 73.32 грн |
| 500+ | 62.43 грн |
| 1000+ | 52.44 грн |
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Технічний опис WNSC2D10650Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 310pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Інші пропозиції WNSC2D10650Q за ціною від 77.63 грн до 206.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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WNSC2D10650Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO220AC Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 310pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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| WNSC2D10650Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 10A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 206.60 грн |
| 50+ | 108.58 грн |
| 100+ | 99.28 грн |
| 500+ | 77.63 грн |