WNSC2D20650CJQ WeEn Semiconductors
Виробник: WeEn SemiconductorsSchottky Diodes & Rectifiers WNSC2D20650CJ/TO3PF/STANDARD MARKING * HORIZONTAL, RAIL PACK
на замовлення 2376 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 420.25 грн |
| 10+ | 353.54 грн |
| 100+ | 240.66 грн |
| 480+ | 170.02 грн |
| 960+ | 166.91 грн |
| 2880+ | 131.20 грн |
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Технічний опис WNSC2D20650CJQ WeEn Semiconductors
Description: DIODE ARRAY SIC 650V 20A TO-3PF, Packaging: Tape & Reel (TR), Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 20A, Supplier Device Package: TO-3PF, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції WNSC2D20650CJQ
| Фото | Назва | Виробник | Інформація |
Доступність |
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WNSC2D20650CJQ | Виробник : WeEn Semiconductors |
Description: DIODE ARRAY SIC 650V 20A TO-3PF Packaging: Tape & Reel (TR) Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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WNSC2D20650CJQ | Виробник : WeEn Semiconductors |
Description: DIODE ARRAY SIC 650V 20A TO-3PF Packaging: Cut Tape (CT) Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-3PF Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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WNSC2D20650CJQ | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Technology: SiC Case: SOT1293; TO3PF Mounting: THT Kind of package: tube Max. forward voltage: 1.8V Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 50A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Type of diode: Schottky rectifying |
товару немає в наявності |