Технічний опис WNSC2D401200W6Q Ween
Description: DIODE SIL CARB 1200V 40A TO2472, Packaging: Bulk, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2068pF @ 1V, 1MHz, Current - Average Rectified (Io): 40A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Інші пропозиції WNSC2D401200W6Q
| Фото | Назва | Виробник | Інформація |
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WNSC2D401200W6Q | Виробник : WeEn Semiconductors |
 Description: DIODE SIL CARB 1200V 40A TO2472Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2068pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
товару немає в наявності |
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| WNSC2D401200W6Q | Виробник : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D401200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товару немає в наявності |
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| WNSC2D401200W6Q | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Max. forward impulse current: 350A Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Load current: 40A Max. forward voltage: 2.5V Max. load current: 80A |
товару немає в наявності |