Технічний опис WNSC2M150120W6Q Ween
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 16.5A, Pulsed drain current: 46A, Power dissipation: 153W, Case: TO247-3, Gate-source voltage: -4...18V, On-state resistance: 233mΩ, Mounting: THT, Gate charge: 40nC, Kind of package: tube, Kind of channel: enhancement.
Інші пропозиції WNSC2M150120W6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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WNSC2M150120W6Q | Виробник : WeEn Semiconductors |
 SiC MOSFETs WNSC2M150120W/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товару немає в наявності |
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| WNSC2M150120W6Q | Виробник : WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16.5A; Idm: 46A; 153W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16.5A Pulsed drain current: 46A Power dissipation: 153W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 233mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |