на замовлення 3840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 240+ | 206.92 грн |
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Технічний опис WNSC2M1K0170WQ Ween
Description: WNSC2M1K0170W/TO247/STANDARD MAR, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 18V, Power Dissipation (Max): 79W (Ta), Vgs(th) (Max) @ Id: 4.2V @ 800µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 1000 V.
Інші пропозиції WNSC2M1K0170WQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| WNSC2M1K0170WQ | Виробник : WeEn Semiconductors |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 79W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 1Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 240 шт |
товар відсутній |
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WNSC2M1K0170WQ | Виробник : WeEn Semiconductors |
Description: WNSC2M1K0170W/TO247/STANDARD MAR Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 18V Power Dissipation (Max): 79W (Ta) Vgs(th) (Max) @ Id: 4.2V @ 800µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 1000 V |
товар відсутній |
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| WNSC2M1K0170WQ | Виробник : WeEn Semiconductors |
MOSFET WNSC2M1K0170W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товар відсутній |
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| WNSC2M1K0170WQ | Виробник : WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 79W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 1Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |