WNSC2M40120B76J WeEn Semiconductors

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 61A; Idm: 170A; 500W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 61A, Pulsed drain current: 170A, Power dissipation: 500W, Case: TO263-7, Gate-source voltage: -4...18V, On-state resistance: 56mΩ, Mounting: SMD, Gate charge: 115nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.