WNSC2M75120R6Q WeEn Semiconductors
Виробник: WeEn SemiconductorsSiC MOSFETs WNSC2M75120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис WNSC2M75120R6Q WeEn Semiconductors
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 38.1A, Pulsed drain current: 100A, Power dissipation: 366W, Case: TO247-4, Gate-source voltage: -4...18V, On-state resistance: 0.105Ω, Mounting: THT, Gate charge: 62nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.
Інші пропозиції WNSC2M75120R6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| WNSC2M75120R6Q | Виробник : WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38.1A Pulsed drain current: 100A Power dissipation: 366W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 0.105Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |