WNSC2M75120R6Q WeEn Semiconductors
Виробник: WeEn SemiconductorsSiC MOSFETs WNSC2M75120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK
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Технічний опис WNSC2M75120R6Q WeEn Semiconductors
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W, Mounting: THT, Case: TO247-4, Drain-source voltage: 1.2kV, Drain current: 38.1A, On-state resistance: 0.105Ω, Type of transistor: N-MOSFET, Power dissipation: 366W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 62nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -4...18V, Pulsed drain current: 100A.
Інші пропозиції WNSC2M75120R6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| WNSC2M75120R6Q | Виробник : WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38.1A; Idm: 100A; 366W Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 38.1A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 366W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 62nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 100A |
товару немає в наявності |