WNSC401200CWQ WEEN SEMICONDUCTORS
Виробник: WEEN SEMICONDUCTORSDescription: WEEN SEMICONDUCTORS - WNSC401200CWQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 1.2 kV, 40 A, 86 nC, TO-247
tariffCode: 85411000
productTraceability: No
Kapazitive Gesamtladung: 86nC
rohsCompliant: YES
Durchschnittlicher Durchlassstrom: 40A
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
Wiederkehrende Spitzensperrspannung: 1.2kV
Betriebstemperatur, max.: 175°C
usEccn: EAR99
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1364.39 грн |
| 5+ | 1113.27 грн |
| 10+ | 947.85 грн |
| 50+ | 840.7 грн |
| 100+ | 722.38 грн |
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Технічний опис WNSC401200CWQ WEEN SEMICONDUCTORS
Description: DIODE SIL CARB 1.2KV 40A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 810pF @ 1V, 1MHz, Current - Average Rectified (Io): 40A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Інші пропозиції WNSC401200CWQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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WNSC401200CWQ | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 200A кількість в упаковці: 480 шт |
товар відсутній |
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WNSC401200CWQ | Виробник : WeEn Semiconductors |
Description: DIODE SIL CARB 1.2KV 40A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 810pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
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| WNSC401200CWQ | Виробник : WeEn Semiconductors |
Schottky Diodes & Rectifiers WNSC2D401200W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
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WNSC401200CWQ | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 200A |
товар відсутній |