WNSC6D16650CW6Q WeEn Semiconductors
Виробник: WeEn SemiconductorsDescription: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 239.76 грн |
| 30+ | 147.19 грн |
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Технічний опис WNSC6D16650CW6Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 780pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.
Інші пропозиції WNSC6D16650CW6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| WNSC6D16650CW6Q | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube Max. off-state voltage: 650V Max. load current: 32A Max. forward voltage: 1.65V Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 110A Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 |
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