WNSC6D16650CW6Q WeEn Semiconductors
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 298.26 грн |
30+ | 227.45 грн |
120+ | 194.96 грн |
510+ | 162.64 грн |
1020+ | 139.26 грн |
2010+ | 131.13 грн |
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Технічний опис WNSC6D16650CW6Q WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 780pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 16 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.
Інші пропозиції WNSC6D16650CW6Q
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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WNSC6D16650CW6Q | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 32A Max. forward voltage: 1.65V Load current: 16A Max. forward impulse current: 110A кількість в упаковці: 1 шт |
товар відсутній |
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WNSC6D16650CW6Q | Виробник : WeEn Semiconductors |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 32A Max. forward voltage: 1.65V Load current: 16A Max. forward impulse current: 110A |
товар відсутній |