WNSC6D20650CW6Q WeEn Semiconductors
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 650V 20A TO247-3
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 377.85 грн |
| 30+ | 219.63 грн |
| 120+ | 186.32 грн |
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Технічний опис WNSC6D20650CW6Q WeEn Semiconductors
Description: DIODE ARR SIC 650V 20A TO247-3, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 20A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.