Технічний опис WNSCM80120R6Q Ween
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 32A, Pulsed drain current: 81A, Power dissipation: 270W, Case: TO247-4, Gate-source voltage: -10...25V, On-state resistance: 0.11Ω, Mounting: THT, Gate charge: 59nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.
Інші пропозиції WNSCM80120R6Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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WNSCM80120R6Q | Виробник : WeEn Semiconductors |
 MOSFET WNSCM80120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товару немає в наявності |
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| WNSCM80120R6Q | Виробник : WeEn Semiconductors |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 32A; Idm: 81A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 32A Pulsed drain current: 81A Power dissipation: 270W Case: TO247-4 Gate-source voltage: -10...25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |