WNSCM80120RQ WeEn Semiconductors

Description: WNSCM80120R/TO247-4L/STANDARD MA, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.5V @ 6mA, Power Dissipation (Max): 270W (Ta), Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk.