Технічний опис WNSCM80120RQ Ween
Description: WNSCM80120R/TO247-4L/STANDARD MA, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V, Power Dissipation (Max): 270W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 6mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V.
Інші пропозиції WNSCM80120RQ
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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WNSCM80120RQ | Виробник : WeEn Semiconductors |
Description: WNSCM80120R/TO247-4L/STANDARD MA Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Power Dissipation (Max): 270W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 6mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 1000 V |
товар відсутній |
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WNSCM80120RQ | Виробник : WeEn Semiconductors | MOSFET WNSCM80120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK |
товар відсутній |