Технічний опис WSJM65R099DQ WeEn Semiconductors
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 20A, Pulsed drain current: 128A, Power dissipation: 240W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 99mΩ, Mounting: THT, Gate charge: 57nC, Kind of package: tube, Kind of channel: enhancement, Version: ESD.
Інші пропозиції WSJM65R099DQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| WSJM65R099DQ | Виробник : WeEn Semiconductors |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 128A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |