XP234N0801TR-G Torex Semiconductor
| Кількість | Ціна |
|---|---|
| 18+ | 18.25 грн |
| 20+ | 16.78 грн |
| 100+ | 12.36 грн |
| 500+ | 8.38 грн |
| 1000+ | 6.63 грн |
| 3000+ | 3.84 грн |
| 6000+ | 3.28 грн |
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Технічний опис XP234N0801TR-G Torex Semiconductor
Description: MOSFET N-CH 30V 800MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 290mOhm @ 400mA, 10V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 10 V.
Інші пропозиції XP234N0801TR-G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
XP234N0801TR-G | Torex Semiconductor Ltd |
Description: MOSFET N-CH 30V 800MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 290mOhm @ 400mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
XP234N0801TR-G | TOREX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.8A; Idm: 1.6A; 0.4W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.8A Pulsed drain current: 1.6A Power dissipation: 0.4W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. |
| XP234N0801TR-G |
![]() |
Виробник: Torex Semiconductor Ltd
Description: MOSFET N-CH 30V 800MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 400mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 10 V
Description: MOSFET N-CH 30V 800MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 400mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| XP234N0801TR-G |
![]() |
Виробник: TOREX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.8A; Idm: 1.6A; 0.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.8A
Pulsed drain current: 1.6A
Power dissipation: 0.4W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.8A; Idm: 1.6A; 0.4W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.8A
Pulsed drain current: 1.6A
Power dissipation: 0.4W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.





