XP264N0301TR-G Torex Semiconductor
| Кількість | Ціна |
|---|---|
| 12+ | 27.29 грн |
| 19+ | 17.02 грн |
| 100+ | 9.36 грн |
| 1000+ | 5.03 грн |
| 3000+ | 3.28 грн |
| 9000+ | 2.72 грн |
| 24000+ | 2.58 грн |
Відгуки про товар
Написати відгук
Технічний опис XP264N0301TR-G Torex Semiconductor
Description: MOSFET N-CH 60V 300MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 400mW (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції XP264N0301TR-G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
XP264N0301TR-G | Torex Semiconductor Ltd |
Description: MOSFET N-CH 60V 300MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
XP264N0301TR-G | Torex Semiconductor Ltd |
Description: MOSFET N-CH 60V 300MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| XP264N0301TR-G |
![]() |
Виробник: Torex Semiconductor Ltd
Description: MOSFET N-CH 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| XP264N0301TR-G |
![]() |
Виробник: Torex Semiconductor Ltd
Description: MOSFET N-CH 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 300MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.




