XP4509AGM YAGEO XSEMI
Виробник: YAGEO XSEMI
Description: MOSFET N/P-CH 30V 11.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
| Кількість | Ціна |
|---|---|
| 2+ | 160.68 грн |
| 10+ | 108.31 грн |
| 100+ | 75.18 грн |
| 500+ | 58.82 грн |
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Технічний опис XP4509AGM YAGEO XSEMI
Description: MOSFET N/P-CH 30V 11.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Інші пропозиції XP4509AGM за ціною від 48.07 грн до 162.57 грн
| Фото | Назва | Виробник | Інформація |
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XP4509AGM | Виробник : YAGEO XSemi |
MOSFETs Complementary N ch + P ch 30V/-30 |
на замовлення 2945 шт: термін постачання 21-30 дні (днів) |
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XP4509AGM | Виробник : YAGEO XSEMI |
Description: MOSFET N/P-CH 30V 11.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
товару немає в наявності |