XP4NAR85CMT YAGEO XSEMI
Виробник: YAGEO XSEMIDescription: MOSFET N CH 40V 61.4A PMPAK5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PMPAK (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9120 pF @ 30 V
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Технічний опис XP4NAR85CMT YAGEO XSEMI
Description: MOSFET N CH 40V 61.4A PMPAK5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61.4A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PMPAK (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 192 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9120 pF @ 30 V.
Інші пропозиції XP4NAR85CMT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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XP4NAR85CMT | Виробник : YAGEO XSemi |
MOSFETs |
товару немає в наявності |