XP50SL290DH YAGEO XSEMI
Виробник: YAGEO XSEMI
Description: MOSFET N CH 500V 13A TO-252(H)
Input Capacitance (Ciss) (Max) @ Vds: 1632 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2W (Ta), 89.2W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис XP50SL290DH YAGEO XSEMI
Description: MOSFET N CH 500V 13A TO-252(H), Input Capacitance (Ciss) (Max) @ Vds: 1632 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2W (Ta), 89.2W (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції XP50SL290DH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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XP50SL290DH | Виробник : YAGEO XSemi |
MOSFETs |
товару немає в наявності |