XPH3R908QB,L1XHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 600µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V
Qualification: AEC-Q101
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Технічний опис XPH3R908QB,L1XHQ Toshiba Semiconductor and Storage
Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V, Power Dissipation (Max): 3W (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 600µA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції XPH3R908QB,L1XHQ
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XPH3R908QB,L1XHQ | Виробник : Toshiba Semiconductor and Storage |
Description: 80V 3.9MOHM N-CH MOSFET SOP ADVA Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 600µA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |