на замовлення 5000 шт:
термін постачання 223-232 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 148.49 грн |
| 10+ | 120.98 грн |
| 25+ | 97.85 грн |
| 100+ | 79.45 грн |
| 250+ | 74.30 грн |
| 500+ | 64.45 грн |
| 1000+ | 59.44 грн |
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Технічний опис XPHR7904PS,L1XHQ Toshiba
Description: 40V UMOS9-H SOP ADVANCE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V, Power Dissipation (Max): 3W (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції XPHR7904PS,L1XHQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| XPHR7904PS,L1XHQ | Виробник : Toshiba Semiconductor and Storage |
 Description: 40V UMOS9-H SOP ADVANCEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 3W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
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| XPHR7904PS,L1XHQ | Виробник : Toshiba Semiconductor and Storage |
Description: 40V UMOS9-H SOP ADVANCE Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V Power Dissipation (Max): 3W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |